Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

Post time 2022-9-9 21:03:18

journal：Nanotechnology

Authors：Keyu Ji; Xiao Cui; Jiwei Chen; Qi Guo; Bing Jiang; Bingjun Wang; Wenhong Sun; Weiguo Hu; Qilin Hua

Published date：2021-8-27

DOI：10.1088/1361-6528/ac02e7

Article link：http://dx.doi.org/10.1088/1361-6528/ac02e7

Article Source：IOP Publishing。

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[IOP] Effect of backside dry etching on the device performance of AlGaN/GaN HEMTs

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