Performance Improvement of an Al/TiO2/Al Electronic Bipolar Resistive Switching Memory Cell via Inserting an Ultrathin ZrO2 Layer

Post time 2023-4-26 22:47:48

journal：ACS Applied Electronic Materials

Authors：Xiang Yuan Li; Tae Hyung Park; Seung Dam Hyun; Cheol Seong Hwang

Published date：2022-11-22

DOI：10.1021/acsaelm.2c01043

Article link：http://dx.doi.org/10.1021/acsaelm.2c01043

Article Source：American Chemical Society (ACS)。

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Post time 2023-4-26 22:47:49

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[ACS] Performance Improvement of an Al/TiO2/Al Electronic Bipolar Resistive Switching Memory Cell via Inserting an Ultrathin ZrO2 Layer

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[ACS] Performance Improvement of an Al/TiO2/Al Electronic Bipolar Resistive Switching Memory Cell via Inserting an Ultrathin ZrO2 Layer