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[IEEE] Novel Trench Inner-Spacer Scheme to Eliminate Parasitic Bottom Transistors in Silicon Nanosheet FETs

shrutikphd Post time 2024-5-24 15:55:04 | Show all posts |Read mode
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journal£ºIEEE Transactions on Electron Devices

Authors£ºJinsu Jeong; Jun-Sik Yoon; Sanguk Lee; Rock-Hyun Baek

Published date£º2023-2-

DOI£º10.1109/ted.2022.3231839

PDF link£ºhttps://ieeexplore.ieee.org/stampPDF/getPDF.jsp?arnumber=10003131

Article link£ºhttp://dx.doi.org/10.1109/ted.2022.3231839

Article Source£ºInstitute of Electrical and Electronics Engineers (IEEE)¡£


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AliAliTN Junior Member
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AliAliTN Post time 2024-5-24 15:55:05 | Show all posts

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